Job
Description
Tata Electronics Private Limited (TEPL) is a greenfield venture of the Tata Group specializing in manufacturing precision components. As a wholly owned subsidiary of Tata Sons Pvt. Ltd., Tata Electronics is dedicated to establishing India's first AI-enabled state-of-the-art Semiconductor Foundry. This groundbreaking facility will be responsible for producing chips for various applications such as power management IC, display drivers, microcontrollers (MCU), and high-performance computing logic, catering to the increasing demand in markets like automotive, computing, data storage, wireless communications, and artificial intelligence. Responsibilities: - Manage Device Engineering tasks for the transfer of 28-90nm technologies from partner facilities, collaborating with the Fab integration team to ensure a seamless transfer process. - Handle Device Engineering responsibilities for implementing feature additions and enhancements to 28-90nm technologies, focusing on improving leakage, performance, RF/Power FOMs, and Auto Grade Qualification among others. - Support the Business team in defining performance targets and conducting cost analysis effectively. - Collaborate with the Integration team on test chip layouts and ensure they meet project performance requirements. - Lead a cross-functional team spanning diverse geographies. - Establish and nurture strong customer relationships founded on confidence in TEPL's technical capabilities. - Conduct competitor benchmarking and contribute to Roadmap development. - Deliver presentations to internal and customer senior executives. - Willingness to travel as required. Essential Attributes: - Proficient in managing, mentoring, and leading a team of highly motivated professionals. - Capable of working independently, displaying self-motivation and a strong drive for success. - A team player with the ability to collaborate across diverse cross-functional teams worldwide. - Possess leadership skills to influence all levels of the organization. - Inclusive mindset, adapting to various global norms and situations. - Enthusiastic learner, approaching challenges with curiosity and resilience, seeking data-driven insights. - Collaborative nature, fostering relationships, providing support, and embracing new approaches. - Innovative and creative, actively exploring new ideas and adapting to change proactively. Qualifications: - M.S or PhD in Electrical Engineering, Engineering Physics, Materials Science, or equivalent. - Sound understanding of device physics, process modules, yield improvement, failure mechanisms, and analytical techniques (physical and electrical). - Ability to guide TCAD and compact modeling teams. - Proven track record in developing and transferring technologies to high volume manufacturing. - Profound knowledge of CMOS, SRAM, and eNVM parameters and figures of merit, with experience in achieving competitive performance. - Understanding of transistor physics and fabrication details, particularly planar MOSFET and BJT, with the ability to optimize transistors based on different implant and other process steps. - Proficiency in guiding teams to design and layout E-test structures and analyze/interpret data from these structures. - Familiarity with Finfet structures. - Capability to lead cross-functional teams and achieve project completion within specified timelines and cost targets. - Ability to work effectively across different cultures and geographies. - Possess an innovation mindset. Desired Experience Level: - 15+ years of experience in the semiconductor industry. - Demonstrated success in developing new technologies for high volume production. - Strong problem-solving skills utilizing design of experiments and analytical tools.,
