R&D Head Power Technologies Theron Solutions

8.0 - 12.0 years

0 Lacs

gujarat

On-site

As an Integration Engineer, you will be responsible for managing the integration of 40-110nm BCD (BCD Lite) and HV (Display Driver) technologies from partner facilities. Your main objective will be to ensure the transfer of technologies while meeting performance, reliability, yield, schedule, and cost targets. Additionally, you will be required to support the initial ramp-up phase while upholding yield and quality metrics. Your role will also involve enhancing existing technologies by adding features like active devices and passives, as well as developing new technologies to improve performance and expand application range. You may also lead Wide Band Gap Power technologies as part of your responsibilities. In this position, you will be involved in the design and layout of test chips to facilitate device/technology optimization, reliability assessment, and SPICE model extraction. Moreover, you will be responsible for end-to-end project management, starting from the initial project justification to final qualification and yield ramp. Your duties will include achieving desired performance, quality, yield, schedule, and cost targets. As part of your role, you will build and lead a cross-functional team that spans across diverse geographies. Establishing strong customer relationships based on confidence in the technical capabilities of the company will also be essential. Competitor benchmarking and ownership of the technology roadmap will be within your purview. You will be expected to present to internal and customer senior executives and may require occasional travel for a few weeks per quarter. To qualify for this position, you should hold an M.S or PhD in Electrical Engineering, Materials Science, or a related field. A strong understanding of CMOS and Power device physics, process modules, yield improvement, failure mechanisms, and analytical techniques is essential. In-depth knowledge of power technology parameters and figures of merit, along with a proven track record in delivering technologies into volume manufacturing, will be advantageous. You should possess an understanding of EDMOS/LDMOS device design trade-offs using resurf and superjunction concepts. Familiarity with key modules, especially as they relate to power technologies, and different power device configurations will be beneficial. Demonstrated ability to lead cross-functional teams, meet project deadlines and cost targets, and work effectively across different cultures and geographies are essential qualities for this role. Being a good team player, having an innovative mindset, and maintaining a competitive outlook will be key to success in this position.,

Posted 3 days ago

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Head Embedded NVM Technologies Theron Solutions

5.0 - 9.0 years

0 Lacs

gujarat

On-site

You should have an M.S or PhD in Electrical Engineering, Materials Science or equivalent field. You must possess a strong understanding of CMOS and eNVM device physics, process modules, yield improvement, failure mechanisms, and analytical techniques (physical and electrical). A deep understanding of key eNVM technologies such as charge trap, floating gate, RRAM, MRAM, etc is essential. Experience in technology parameters and figures of merit like bit cell size, macro size, endurance, retention, power, latency, mask count, etc is required. You should have a proven track record in delivering these technologies into volume manufacturing and achieving competitive performance. The ability to lead cross-functional teams and ensure project completion within timeline and cost targets is necessary. Working across different cultures and geographies should be a strength along with being a good team player. Having an innovative and competitive mindset will be beneficial in this role.,

Posted 3 days ago

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