R&D Embedded Non Volatile Memory Engineer

10 - 14 years

0 Lacs

Posted:2 weeks ago| Platform: Shine logo

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On-site

Job Type

Full Time

Job Description

You will be joining Tata Electronics Private Limited, a greenfield venture of the Tata Group specializing in manufacturing precision components. As a subsidiary of Tata Sons Pvt. Ltd., the company is at the forefront of building India's first AI-enabled state-of-the-art Semiconductor Foundry. This cutting-edge facility aims to produce chips for various applications such as power management IC, display drivers, microcontrollers (MCU), and high-performance computing logic to cater to the increasing demand in markets like automotive, computing, data storage, wireless communications, and artificial intelligence. **Responsibilities:** - Integrate eNVM (embedded Non Volatile Memory) Features into 28-110nm platform technologies, including MTP and Flash, collaborating with IP providers when necessary. - Design and layout bit cell and test chips to assist in device/technology optimization, reliability assessment, and SPICE model extraction. - Develop the eNVM process while achieving diverse objectives such as macro size, cost, endurance, retention, manufacturability, read/write speed, and yield. - Collaborate with designers to specify competitive macros. - Create test programs to assess bit cells and macros for yield and reliability, optimizing the program for performance and reliability. - Deliver presentations to customers, peers, and executives. - Manage the overall project, which may involve travel. **Essential Attributes:** - Manage semiconductor technology projects effectively. - Work independently with a strong drive to succeed. - Collaborate with diverse cross-functional teams globally. - Communicate effectively with an inclusive style. - Approach challenges with curiosity and resilience, seeking data-driven solutions. - Act as a collaborative team player, fostering relationships and offering support openly. - Display innovation and creativity, exploring new ideas and adapting quickly to change. **Qualifications:** - Hold an M.S or PhD in Electrical Engineering, Materials Science, or equivalent field. - Possess a strong grasp of CMOS and eNVM device physics, process modules, yield improvement, failure mechanisms, and analytical techniques. - Deep understanding of key eNVM technologies like charge trap, floating gate, RRAM, MRAM, etc. - Familiarity with technology parameters and figures of merit such as bit cell size, macro size, endurance, retention, power, latency, and mask count, with a track record of achieving competitive performance. - Demonstrated experience in successfully implementing eNVM technologies in volume manufacturing. - Ability to lead cross-functional teams and meet project deadlines and cost targets. - Comfortable working across different cultures and geographies. - Strong team player with an innovative and competitive mindset. **Desired Experience Level:** - Over 10 years of experience in the semiconductor industry, primarily in the memory field. - Proven track record of developing new technologies for high volume production successfully. - Proficiency in problem-solving using design of experiments and analytical tools.,

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