Principal Engineer - HBT Compact Modeling Globalfoundries Engineering Private Limited

5.0 - 10.0 years

2 - 5 Lacs

Bengaluru / Bangalore, Karnataka, India

Remote

The role requires a strong background in semiconductor device physics of diodes, BJTs, HBTs, MOSFETs and HEMTs. The candidate should be familiar with the electrical behaviors of said semiconductor devices (DC/low frequency, RF/high frequency, noise, mismatch, etc.), and the types of test structures that are needed to characterize them. The candidate should be able to Apply his/her knowledge of semiconductor device physics in a practical compact model extraction scenario; Analyze and explain the trends in the data, distinguish real trends from noise; Associate various physical phenomena with the observed trends; Submit electrical characterization requests; Extract various compact modeling parameters; Do QA checks and submit the model for release. The candidate should also be familiar with Simulations in Cadence ADE; Perl / Shell / python scripting ; Industry standard compact model families and parameter extraction tools/methodologies; and Verilog-A programming Apart from strong technical skills, the candidate should also possess Excellent communication skills; Be able to work across geographies and time zones. Be self driven and self motivated to excel, innovate and solve problems. This is not a remote work position; the candidate is expected to work out of Bangalore and come to office atleast three times a week. Required Qualifications Education PhD in the domain of semiconductor devices Years of Experience 0 Preferred Qualifications: PhD with specialization in HBT devices

Posted 1 month ago

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